Memory Core Design Engineering Intern

Location: Rancho Cordova, CA, us

Company Description

Join a multibillion-dollar global company that brings together amazing technology, people, and operational scale to become a powerhouse in the memory industry. Headquartered in Rancho Cordova, California, Solidigm combines elements of an established, successful technology company with the spirit, agility, and entrepreneurial mindset of a start-up. In addition to the U.S. headquarters and other facilities in the U.S., the company has international presence in Asia, Europe, and the Americas. Solidigm will continue to lead the world in innovating new Memory technologies with aspirations to be the #1 NAND memory company in the world. At Solidigm, we view problems as opportunities to define innovative solutions that hold the power to change the world and unleash the potential technological needs that the future holds. At Solidigm, we are One Team that fosters a diverse, equitable, and inclusive culture that embraces individual uniqueness and empowers us to bring our best selves to deliver excellence in support of Solidigm's vision and mission to be the go-to partner for optimized data storage solutions. You can be part of the takeoff of an innovative business that develops cutting-edge products, delivers strong business value for customers, provides an engaging workplace for its employees, and serves a greater impact on the world. This is a golden opportunity for the right applicant to join us and help design, build, and lead Solidigm. We want a diverse team of dedicated professionals who will not just be Solidigm team members but contribute to how we shape the future of the organization. We are seeking applicants who will grow and thrive in our culture; be customer inspired, trusting, innovative, team-oriented, inclusive, results driven, collaborative, passionate, and flexible.

Job Description

This is a high-autonomy, high-ownership internship. You will work directly alongside engineers and scientists to build world’s only floating gate memory technology that has immediate, tangible impact on AI infrastructure. Some days you're heads-down designing circuits all day. Other days you're pairing with engineers across the company to understand and develop a new feature our customers’ demand. We are looking for a versatile hardware engineer who is interested in architecting and implementing elegant memory design solutions and thrive with the autonomy to propose creative approaches to problems.

As an intern, you will work on innovative circuits (analog, semi-custom and mixed-signal design) for 3DNAND flash memory core. Collaborate with cross-functional teams to improve the power, performance, area and reliability by detailed transistor-level analysis.

Drive architecture, design and physical implementation of memory core circuits involving memory cell arrays, sense amplifiers, decoders and word line / bit line drivers.

Responsibilities may be quite diverse of a technical nature. U.S. experience and education requirements will vary significantly depending on the unique needs of the job.

Job assignments are usually for the summer for a duration of six months.

Qualifications

Candidate must be a graduate student pursuing either Masters or Ph.D. degree in Electrical / Electronic Engineering. Candidate must be in good academic standing.

Additional Information

Powered by SmartRecruiters - Candidate Privacy Policy