Nexperia: Global semiconductor company logo

Principal Device Engineer, GaN Power Devices

Nexperia: Global semiconductor company

On-site
Manchester, UK
Full-time
Principal
Salary not listedPosted 2w ago

Real job — pulled straight from Nexperia: Global semiconductor company’s careers page · Verified July 27, 2026 · No reposts.

Job description

Nexperia: Global semiconductor company is hiring a Principal Device Engineer, GaN Power Devices — a full-time, based in Manchester, UK role. Apply directly on Nexperia: Global semiconductor company's careers page below.

(Senior) Principal Device Engineer (m/f/d) – GaN Power Devices

Location: Manchester, Hamburg, Munich

Time Type: Full time

Job Description

About the Role
Join Nexperia and drive the development of next-generation GaN power devices. In this senior role, you will provide technical leadership in device architecture, simulation, and optimization—translating advanced device physics into high-performance, manufacturable solutions.

What You Will Do

  • Lead device architecture definition and optimization for GaN technologies

  • Own performance targets and balance trade-offs across performance, reliability, and manufacturability

  • Drive TCAD simulation, modeling, and design to support technology and product development

  • Collaborate with cross-functional teams across process, characterization, reliability, and product engineering

  • Support industrialization by delivering robust, scalable device concepts

Your Profile

  • Degree (MSc/PhD) or equivalent in semiconductor physics, electrical engineering, or related field

  • Proven experience in GaN or wide bandgap device development

  • Strong expertise in device physics, TCAD simulation, and semiconductor design

  • Track record of leading complex, multidisciplinary technical projects

  • Analytical, self-driven, and collaborative mindset in an international environment

Your Team

Join our growing global GaN team and help shape the future of power discretes. We are seeking talented individuals with deep technical expertise, an open mindset, and a drive to solve complex challenges and turn ideas into practical, scalable solutions.

Talent acquisition based on Nexperia vacancies is not appreciated. Nexperia job adverts are Nexperia copyright © material and the word Nexperia® is a registered trademark.

D&I Statement

As an equal-opportunity employer, Nexperia values diversity not just because it is the right thing to do but because diverse teams perform better. We are dedicated to being inclusive, and a proof point of this dedication is that we were the main partner of the very first Dutch Paralympic Team NL House during the Paris 2024 Paralympic Games. Our recruitment process is inclusive and accessible to all, and we consider all applicants fairly, as well as providing a safe work environment and reasonable adjustments where requested.

In addition, we offer our colleagues the possibility to join employee resource groups such as the Pride Network Group or global and local Women's groups. Nexperia is committed to increasing women in management positions to 30% by 2030.

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Frequently asked questions

What skills are required for Principal Device Engineer, GaN Power Devices at Nexperia: Global semiconductor company?

The required skills for Principal Device Engineer, GaN Power Devices at Nexperia: Global semiconductor company include: Electrical Engineering.

What is the seniority level for Principal Device Engineer, GaN Power Devices at Nexperia: Global semiconductor company?

Principal Device Engineer, GaN Power Devices at Nexperia: Global semiconductor company is a Principal level position.

How do I apply for Principal Device Engineer, GaN Power Devices at Nexperia: Global semiconductor company?

You can view the full description and apply for Principal Device Engineer, GaN Power Devices at Nexperia: Global semiconductor company on EchoJobs: https://echojobs.io/job/nexperia-global-semiconductor-company-senior-principal-device-engineer-m-f-d-gan-power-devices-vnmub.